• Title of article

    Adsorption and decomposition of triethylindium on an InP(0 0 1)-(2×4) surface studied by STM, TPD, and HREELS

  • Author/Authors

    Fukuda ، نويسنده , , Y. and Kobayashi، نويسنده , , T. and Shirai، نويسنده , , T. and Sanada، نويسنده , , N.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    5
  • From page
    290
  • To page
    294
  • Abstract
    Adsorption and decomposition of triethylindium (TEI) on an InP(0 0 1)-(2×4) surface have been studied by scanning tunneling microscopy (STM), temperature programmed desorption (TPD), and high-resolution electron energy loss spectroscopy (HREELS). Filled-state STM images indicate that TEI molecules are preferentially adsorbed at the center of the hetero(mixed-)-dimer rows along the [1 1̄ 0] direction. A line profile of empty-state STM images concludes that TEI is adsorbed on the P atom at the surface. TPD data and HREELS spectra show that ethyl radical and ethylene are evolved at about 380 and 435 K, respectively, as decomposition products. The HREELS spectra suggest that TEI is adsorbed molecularly at RT and that vibration modes related to hydrocarbon disappeared at about 500 K. Adsorption sites and the decomposition mechanism are discussed in terms of the (2×4) surface structure.
  • Keywords
    Semiconducting films , Indium phosphide , Scanning tunneling microscopy , Electron energy loss spectroscopy (EELS) , Chemisorption , thermal desorption
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1694313