Title of article :
Adsorption and decomposition of triethylindium on an InP(0 0 1)-(2×4) surface studied by STM, TPD, and HREELS
Author/Authors :
Fukuda ، نويسنده , , Y. and Kobayashi، نويسنده , , T. and Shirai، نويسنده , , T. and Sanada، نويسنده , , N.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
5
From page :
290
To page :
294
Abstract :
Adsorption and decomposition of triethylindium (TEI) on an InP(0 0 1)-(2×4) surface have been studied by scanning tunneling microscopy (STM), temperature programmed desorption (TPD), and high-resolution electron energy loss spectroscopy (HREELS). Filled-state STM images indicate that TEI molecules are preferentially adsorbed at the center of the hetero(mixed-)-dimer rows along the [1 1̄ 0] direction. A line profile of empty-state STM images concludes that TEI is adsorbed on the P atom at the surface. TPD data and HREELS spectra show that ethyl radical and ethylene are evolved at about 380 and 435 K, respectively, as decomposition products. The HREELS spectra suggest that TEI is adsorbed molecularly at RT and that vibration modes related to hydrocarbon disappeared at about 500 K. Adsorption sites and the decomposition mechanism are discussed in terms of the (2×4) surface structure.
Keywords :
Semiconducting films , Indium phosphide , Scanning tunneling microscopy , Electron energy loss spectroscopy (EELS) , Chemisorption , thermal desorption
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1694313
Link To Document :
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