Title of article :
Ba induced step arrangement of vicinal Si(1 1 1) surface observed by LEED and STM
Author/Authors :
Aono، نويسنده , , M. and Fukui، نويسنده , , Y. and Urano، نويسنده , , T. and Ojima، نويسنده , , K. and Yoshimura، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
Adsorbed structures of Ba on Si(1 1 1) surfaces have been investigated by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). We compared the vicinal substrate surface toward [1 2̄ 1] direction with the flat substrate surface of which the inclination from the (1 1 1) plane is small in order to confirm whether the step arrangement is caused by the cooperation of the superstructure on the surface and the proper miscut angle of substrate. On the vicinal Si(1 1 1) surface, one-dimensional step arrangement of 10-times the unit length terraces with a double-layer step height has been observed by STM after annealing at about 1220 K. On the flat Si(1 1 1) surface, three domains of 5×1 have been observed in the same temperature range by LEED and STM.
Keywords :
Alkaline earth metals , Low energy electron diffraction (LEED) , Scanning tunneling microscopy , Silicon , Vicinal single crystal surfaces , Step formation and bunching
Journal title :
Surface Science
Journal title :
Surface Science