Title of article
Effect of annealing on the magnetic properties of ultrathin Co/Ge(1 1 1) films
Author/Authors
Tsay، نويسنده , , J.S. and Yao، نويسنده , , Y.D. and Wang، نويسنده , , K.C. and Cheng، نويسنده , , W.C. and Yang، نويسنده , , C.S.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
4
From page
498
To page
501
Abstract
Effect of annealing on the magnetic properties of ultrathin Co/Ge(1 1 1) films has been investigated using the surface magneto-optic Kerr effect technique. As the annealing temperature increases from 200 to 450 K, the Kerr intensity decreases to zero for all the samples. The temperature, where ferromagnetism vanishes, increases from below 200 to 375 K as the coverage of the cobalt film increases from 5 to 28 monolayers (ML). Corresponding compositions obtained from the Auger electron spectroscopy measurements show an intermixing of the cobalt adlayer and the Ge(1 1 1) substrate. For a 20-ML-thick Co/Ge(1 1 1) film, the intensity ratio of Co to Ge Auger signals drops to roughly half of the original value as the annealing temperature increases to 325 K, at which the hysteresis disappears. This indicates the formation of a CoGe compound at the surface layers. Cobalt films possess an in-plane anisotropy as deposited at a substrate temperature of 200 K. The magnetic easy axis retains in the surface plane at an elevated temperature.
Keywords
Cobalt , Germanium , Magnetic measurements , Metal–semiconductor magnetic heterostructures , Auger electron spectroscopy
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694433
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