Initial stages of Cu/Si interface formation

The adsorption of Cu atoms on the Si(1 1 1)-7×7 surface was studied by scanning tunnelling microscopy. The flash up to ∼550 °C stimulates a reaction leading to the massive re-arrangement of the surface resulting in the formation of 7×7 domains separated by disordered regions. Mostly, copper atoms are concentrated in these regions. Isolated Cu atoms were found incorporated in 7×7 reconstruction on the domains surface.