Title of article :
Kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (0 0 1)
Author/Authors :
Sun، نويسنده , , Y and Law، نويسنده , , D.C and Visbeck، نويسنده , , S.B and Hicks، نويسنده , , R.F، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
7
From page :
256
To page :
262
Abstract :
The kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (0 0 1) have been determined using reflectance difference spectroscopy for real-time monitoring of the phosphorus coverage. The precursor adsorption rate depends linearly on the coverage, and the initial sticking coefficient varies from 0.007 to 0.001 as the temperature increases from 420 to 520 °C. The phosphorus desorption rate is first order in the coverage and exhibits an activation energy and pre-exponential factor of 2.4 ± 0.2 eV and 1014.7 ± 1.5 s−1. These reaction kinetics play an important role in the growth of phosphide-based alloys by metalorganic vapor-phase epitaxy.
Keywords :
Surface chemical reaction , Indium phosphide
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1694697
Link To Document :
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