Title of article :
Growth and structure of Fe, Co and Ni films on hydrogen-terminated Si(1 1 1) surfaces
Author/Authors :
Gruyters، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) have been used to provide a detailed analysis of the growth and structure of thin 3d transition metal films on H/Si(1 1 1)1×1 substrates. The high homogeneity and chemical integrity of wet chemically prepared substrates has been demonstrated by STM, LEED and AES. For room temperature deposition of Co, STM measurements have revealed an island growth mode and the formation of dense granular films. It has also been evidenced by XRD that hydrogen-terminated Si(1 1 1) substrates enable film growth with single crystalline surface orientation for Fe, Co and Ni.
Keywords :
Scanning tunneling microscopy , growth , Silicon , Metallic films
Journal title :
Surface Science
Journal title :
Surface Science