Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al2O3 layers on Ni3Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al2O3 layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 إ of Co, a complete screening of the dipoles of the Al2O3 layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.