Title of article :
Co-adsorption of Cu and Pb on the Si(1 1 1)–(7 × 7) surface: interface formation
Author/Authors :
Shukrinov، نويسنده , , Pavel and Mutombo، نويسنده , , Pingo and Ch?b، نويسنده , , Vladimir and Prince، نويسنده , , K.C.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Pages :
5
From page :
650
To page :
654
Abstract :
The adsorption of Cu and Pb atoms on a Si(1 1 1)–7 × 7 surface was studied by means of scanning tunnelling microscopy (STM). After deposition of ⩽0.1 monolayer (ML) of copper on the Pb √3×√3 mosaic phase and a subsequent annealing up to ∼373 K, new objects of a hexagonal shape appear on a surface. They are scattered over the surface and localised next to the mosaic phase islands. The difference between atomically resolved images of filled and empty states suggests strong covalent bonding within a hexagon. Increasing the concentration of Cu atoms leads to an increasing number of hexagons and their agglomeration. Annealing of this surface at a higher temperature (>470 K) leads to the transformation of these hexagonal-like objects and their agglomeration into the pseudo-“5 × 5” structure, commonly observed for the Cu/Si(1 1 1)system. The absence of hexagons at very low Cu concentration demonstrates the presence of a long-range, attractive interaction among Cu atoms and their strong diffusion just above room temperature (RT).
Keywords :
and topography , Scanning tunneling microscopy , morphology , surface structure , Roughness , Lead , Silicon , Copper
Journal title :
Surface Science
Serial Year :
2003
Journal title :
Surface Science
Record number :
1695919
Link To Document :
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