Title of article
Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings
Author/Authors
Li، نويسنده , , Yiming and Lu، نويسنده , , Hsiao-Mei and Voskoboynikov، نويسنده , , O. and Lee، نويسنده , , C.P. and Sze، نويسنده , , S.M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
5
From page
811
To page
815
Abstract
We study the electron and hole energy states for a complete three-dimensional (3D) model of semiconductor nano-scale quantum rings in an external magnetic field. In this study, the model formulation includes: (i) the position dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the position dependent effective mass Hamiltonian in parabolic approximation for holes, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel–Duke boundary conditions. To solve this 3D non-linear problem, we apply the non-linear iterative method to obtain self-consistent solutions. We find a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields. The result is useful in describing magneto-optical properties of the nano-scale quantum rings.
Keywords
computer simulations , Magnetic phenomena (cyclotron resonance , etc.) , Gallium arsenide , Phase transitions , Heterojunctions , Indium arsenide , quantum effects
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1696033
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