• Title of article

    Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings

  • Author/Authors

    Li، نويسنده , , Yiming and Lu، نويسنده , , Hsiao-Mei and Voskoboynikov، نويسنده , , O. and Lee، نويسنده , , C.P. and Sze، نويسنده , , S.M.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2003
  • Pages
    5
  • From page
    811
  • To page
    815
  • Abstract
    We study the electron and hole energy states for a complete three-dimensional (3D) model of semiconductor nano-scale quantum rings in an external magnetic field. In this study, the model formulation includes: (i) the position dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the position dependent effective mass Hamiltonian in parabolic approximation for holes, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel–Duke boundary conditions. To solve this 3D non-linear problem, we apply the non-linear iterative method to obtain self-consistent solutions. We find a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields. The result is useful in describing magneto-optical properties of the nano-scale quantum rings.
  • Keywords
    computer simulations , Magnetic phenomena (cyclotron resonance , etc.) , Gallium arsenide , Phase transitions , Heterojunctions , Indium arsenide , quantum effects
  • Journal title
    Surface Science
  • Serial Year
    2003
  • Journal title
    Surface Science
  • Record number

    1696033