Title of article
New electronic surface states on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface
Author/Authors
De Padova، نويسنده , , P. and Perfetti، نويسنده , , P. and Quaresima، نويسنده , , C. and Richter، نويسنده , , C. and Heckmann، نويسنده , , O. and Zerrouki، نويسنده , , M. and Johnson، نويسنده , , R.L. and Hricovini، نويسنده , , K.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
6
From page
837
To page
842
Abstract
We report the studies of electronic structure of the InAs(0 0 1)4 × 2-c(8 × 2) surface by performing angle-resolved photoemission spectroscopy, LEED and STM measurements. The reconstruction of the clean surface was obtained by ion bombardment and annealing procedure. STM pictures show an ordered array of In-chains, and the photoemission experiments reveal new electronic surface structures. The intensity of these structures, which are located at binding energy of −2.94 and −1.05 eV, strongly depend on the surface preparation, and on the light polarization. They are non-dispersive with the photon energy.
Keywords
Indium arsenide , Single crystal surfaces , Angle resolved photoemission , Synchrotron radiation photoelectron spectroscopy , Surface electronic phenomena (work function , Surface potential , Surface states , etc.)
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1696048
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