Author/Authors :
Karlsson، نويسنده , , K.F. and Moskalenko، نويسنده , , E.S. and Holtz، نويسنده , , P.O. and Monemar، نويسنده , , B. and Schoenfeld، نويسنده , , W.V. and Garcia، نويسنده , , J.M. and Petroff، نويسنده , , P.M.، نويسنده ,
Abstract :
The existence of a well-defined threshold energy, crucial for the charging of quantum dots (QDs), positioned between the barrier band gap and the wetting layer ground state is demonstrated. Optical excitation with energies above this threshold populates the QDs with extra electrons. The origin of the threshold is discussed in terms of acceptors in the GaAs barrier.
