Title of article
Periodic surface modulation on thin epitaxial FeSi2 layers on Si(0 0 1)
Author/Authors
Hajjar، نويسنده , , S. and Garreau، نويسنده , , G. and Pelletier، نويسنده , , S. and Bertoncini، نويسنده , , P. and Wetzel، نويسنده , , P. and Gewinner، نويسنده , , G. and Imhoff، نويسنده , , M. and Pirri، نويسنده , , C.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
6
From page
940
To page
945
Abstract
The morphology and the structure of thin metastable iron disilicide films grown on Si(0 0 1) are studied by scanning tunneling microscopy and X-ray photoelectron diffraction. It is shown that the FeSi2 silicide has a quadratic crystallographic structure, with the c-axis perpendicular to the sample surface. As to the film morphology, the silicide consists of rather flat islands with a √2×√2 R45° surface periodicity for a coverage lower than 4 ML. At a nominal Fe coverage of 4 ML, the silicon surface is almost completely covered. The surface exhibits a quite periodic height modulation of about 2 Å.
Keywords
Silicon , surface structure , morphology , and topography , Photoelectron spectroscopy , Solid phase epitaxy , Scanning tunneling microscopy , Metal–semiconductor interfaces , Silicides , Roughness , Photoelectron diffraction
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1696121
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