Title of article
Electrochemical preparation of lead-doped amorphous Se films and underpotential deposition of lead onto these films
Author/Authors
Ivanov، نويسنده , , Dmitry K. and Osipovich، نويسنده , , Nikolay P. and Poznyak، نويسنده , , Sergey K. and Streltsov، نويسنده , , Eugene A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
6
From page
1092
To page
1097
Abstract
The process of the underpotential deposition (UPD) of Pb adatoms (Pbad) onto Se was used to produce nanocomposite films consisting of amorphous Se and nanosized PbSe clusters distributed throughout the film bulk. It was found that doping lead into Se films modifies their optical and photoelectrochemical properties and increases the efficiency of the charge transfer both in the film bulk and through the semiconductor | electrolyte interface. Introducing lead into the bulk of Se films significantly promotes the process of Pbad UPD onto Se surface. The underpotentially deposited Pbad interact chemically with Se surface atoms, resulting in the formation of a PbSe monolayer. The PbSe formed can be identified by the anodic peak corresponding to its electrochemical oxidation.
Keywords
Chalcogens , Electrochemical methods , Lead , Semiconductor–electrolyte interfaces , Amorphous thin films , Semiconductor–semiconductor thin film structures , Adatoms
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1696211
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