• Title of article

    Atomic structure of Bi-dimer row selectively adsorbed on Si(5 5 12)-2 × 1 surface

  • Author/Authors

    Cho، نويسنده , , Sanghee and Seo، نويسنده , , Jae، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2004
  • Pages
    13
  • From page
    14
  • To page
    26
  • Abstract
    In order to understand the atomic structure of nanostructures self-assembled on the template with one-dimensional symmetry, Bi/Si(5 5 12) system has been chosen and Bi-adsorption steps have been studied by STM. With Bi adsorption, the clean Si(5 5 12) is transformed to (3 3 7) terraces with disordered boundary due to mismatched periodicities between (3 3 7) and (5 5 12), and Bi-dimer rows are formed inside the (3 3 7) unit as follows: Initially, when Bi atoms are deposited at the adsorption temperature of about 450 °C, they selectively replace Si-dimers and Si-adatoms and form adsorbed Bi-dimers and Bi-adatoms, respectively. If additional Bi is supplied, the Bi-dimers adsorb on the Bi-dimers and Bi-adatoms in the first layer. These adsorbed dimers in the second layer are facing each other to form a Bi-dimer pair with relatively stable p3 bonding. Finally, a single Bi-dimer adsorbs above the Bi-dimer pair in the second layer, at which point the Bi layer thickness saturates. It has been concluded that the Bi-dimer pair with stable p3 bonding is the composing element in the second layer and such site-selective adsorption is possible due to the substrate-strain relaxation through inserting Bi-buffer layer limited to specific sites of the substrate.
  • Keywords
    surface structure , morphology , and topography , Silicon , Bismuth , Scanning tunneling microscopy , Roughness , Chemisorption
  • Journal title
    Surface Science
  • Serial Year
    2004
  • Journal title
    Surface Science
  • Record number

    1696794