Title of article :
LEED structural analysis of GaAs(0 0 1)-c(4 × 4) surface
Author/Authors :
Romanyuk، نويسنده , , O. and Jiricek، نويسنده , , P. and Cukr، نويسنده , , M. and Barto?، نويسنده , , I.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(0 0 1)-c(4 × 4) grown by molecular beam epitaxy (MBE) has been performed. Surface structures with symmetrical and asymmetrical 3-dimer models in the topmost layer have been investigated. The best-fit structure with central dimer compressed with respect to the As4 molecule by 20% has been found. Model with asymmetrically arranged dimers fits experimental data better than that with symmetrical alignment.
Keywords :
scattering , Diffraction , Surface relaxation and reconstruction , Low energy electron diffraction (LEED) , Gallium arsenide , Low index single crystal surfaces , Molecular Beam Epitaxy , Electron–solid interactions
Journal title :
Surface Science
Journal title :
Surface Science
