Title of article
Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)
Author/Authors
Flege، نويسنده , , J.I. and Schmidt، نويسنده , , Th. and Materlik، نويسنده , , G. and Falta، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
6
From page
94
To page
99
Abstract
We present a detailed study of the interaction of chlorine with the Si(1 1 3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2×n) reconstructions with n=2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [3 3 2̄] direction.
Keywords
Chlorine , Silicon , High index single crystal surfaces , Scanning tunneling microscopy , Etching , surface structure , morphology , Surface relaxation and reconstruction , and topography , Roughness
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1696869
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