• Title of article

    Single atom diffusion of Pb on a Si(1 1 1)-7 × 7 surface

  • Author/Authors

    Kuntov?، نويسنده , , Z. and Jel??nek، نويسنده , , P. and Ch?b، نويسنده , , V. and Chvoj، نويسنده , , Z.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2004
  • Pages
    7
  • From page
    130
  • To page
    136
  • Abstract
    Pb diffusion on the Si(1 1 1)-7 × 7 surface was studied with 16 different energy barriers. As a part of general problem of diffusion in the unit cell, some characteristics of diffusion (as frequency factor, effective energy barrier or differences in binding energy) was found analytically as a steady state solution of the master equation. The probability distribution of the occupation of particular sites was compared with the result of the Monte Carlo simulation and the STM experiment. Starting from the values obtained with the semi-empirical extended Hückel approximation, the diffusion barriers were adjusted to obtain a reasonable coherence with the experiment. The results of MC simulation and the analytical solution agree quite well and reproduce the dynamics of a Pb atom in the 7 × 7 unit cell.
  • Keywords
    surface diffusion , Lead , Semiconducting surfaces , Monte Carlo simulations , Scanning tunneling microscopy
  • Journal title
    Surface Science
  • Serial Year
    2004
  • Journal title
    Surface Science
  • Record number

    1696892