Title of article
Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy
Author/Authors
Franke، نويسنده , , K. and Weihnacht، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
11
From page
144
To page
154
Abstract
Polarization switching in scanning force microscopy (SFM) is influenced by both electric fields and stress, whereby the latter can arise inherently from Maxwell stress. We discuss the influence of electric charges and of the polarization asymmetry on the switching behaviour. For single crystallites of PZT(53/47) thin films, the sectors for ferroelectric, ferroelastoelectric and ferroelastic switching are represented in a field-stress map. The influence of stress on the second harmonic of the SFM is also discussed.
Keywords
Microscopy atomic force , Polarization dielectric , Thin films dielectric , ferroelectricity
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1697311
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