Crystal growth of SrTiO3 films on H-terminated Si(1 1 1) with SrO buffer layers

Growth of epitaxial SrTiO3 (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)∥SrO(1 1 1) and STO [ 0 0 1 ] ∥ SrO [ 1 1 ¯ 0 ] .