• Title of article

    Atomic structure of thin dysprosium-silicide layers on Si(1 1 1)

  • Author/Authors

    Engelhardt، نويسنده , , I. and Preinesberger، نويسنده , , C. and Becker، نويسنده , , S.K. and Eisele، نويسنده , , H. and Dنhne، نويسنده , , M.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2006
  • Pages
    7
  • From page
    755
  • To page
    761
  • Abstract
    We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a 2 3 × 2 3 R 30 ° and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the 2 3 × 2 3 R 30 ° superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi2 was observed, while several monolayers thick films are characterized by a 3 × 3 R 30 ° superstructure from Dy3Si5.
  • Keywords
    Lanthanides , Silicides , Silicon , Thin film structures , Scanning-tunneling microscopy
  • Journal title
    Surface Science
  • Serial Year
    2006
  • Journal title
    Surface Science
  • Record number

    1697761