Author/Authors :
Kowalik، نويسنده , , I.A. and Kowalski، نويسنده , , B.J. and Kaczor، نويسنده , , P. and Orlowski، نويسنده , , B.A. and Lusakowska، نويسنده , , E. and Johnson، نويسنده , , R.L. and Houssiau، نويسنده , , L. and Brison، نويسنده , , J. and Grzegory، نويسنده , , I. and Porowski، نويسنده , , S.، نويسنده ,
Abstract :
Ti/GaN interface formation on GaN(0 0 0 1)-(1 × 1) surface has been investigated by means of resonant photoelectron spectroscopy (for photon energies near to Ti 3p → 3d excitation). The sets of photoelectron energy distribution curves were recorded for in situ prepared clean GaN surface and as a function of Ti coverage followed by post-deposition annealing. Manifestations of chemical reactions at the Ti/GaN interface were revealed in the valence band spectra as well as in the Ga 3d core level peak—the discerned contribution of Ti 3d states to the valence band turned out to be similar to that reported in the literature for titanium nitride. The interaction between Ti and N was further enhanced by post-deposition annealing. The study was complemented with SIMS and AFM measurements.
Keywords :
Synchrotron radiation photoelectron spectroscopy , Interface states , Gallium nitride , Metal–semiconductor interface , Titanium
