Author/Authors :
Lee، نويسنده , , Hangil and Lee، نويسنده , , Dohyun and Lim، نويسنده , , Do Kyung and Kim، نويسنده , , Sehun and Hwang، نويسنده , , Chanyong، نويسنده ,
Abstract :
One-dimensional Ce nanowires have been grown on a single-domain vicinal Si(1 0 0) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Ce coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Ce nanowires along the step edges on the vicinal Si(1 0 0) substrate at 580 °C.
