Author/Authors :
Nelson، نويسنده , , A.J. and Felter، نويسنده , , T.E. and Wu، نويسنده , , K.J. and Evans، نويسنده , , C. and Ferreira، نويسنده , , J.L. and Siekhaus، نويسنده , , W.J. and McLean، نويسنده , , W.، نويسنده ,
Abstract :
Implantation of 33 keV C+ ions into polycrystalline U238 with a dose of 4.3 × 1017 cm−2 produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C+ ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two regions. The U 4f, O 1s and C 1s core-level and valence band spectra clearly indicate carbide formation in the modified surface layer. The time-of-flight secondary ion mass spectrometry depth profiling results reveal an oxy-carbide surface layer over an approximately 200 nm thick UC layer with little or no residual oxidation at the carbide layer/U metal transitional interface.
Keywords :
Uranium carbide , uranium , Ion implantation , TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF-SIMS) , X-Ray Photoelectron Spectroscopy (XPS)