Title of article
Hydrogen related point defects in silicon based layers: Si(·)H and SiOOH
Author/Authors
D??nek، نويسنده , , Vladislav and Vacek، نويسنده , , Karel and Yuzhakov، نويسنده , , Gleb and Bastl، نويسنده , , Zden?k and Naumov، نويسنده , , Sergej، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
6
From page
1462
To page
1467
Abstract
Layers prepared by pulsed TEA CO2 pulsed laser ablation (PLA) of SiO and SiO2 targets in helium were exposed to hydrogen and deuterium atmosphere up to several kPa. The deposited layers were investigated by FTIR, EPR and XP spectroscopy. Among various Si species silyl radical Si(·)H (Si(·)D) at 2166 (1568) cm−1—H(I) center—and silyl hydroperoxide SiOOH (SiOOD) at 3587 (2648) cm−1 were identified in FTIR spectra. Chemical pathways for production of these species are discussed. Experimental results are supported by quantum chemical calculations.
Keywords
Surface defects , Silicon oxides , pulsed laser ablation , infrared spectroscopy
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1697998
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