Title of article :
Scanning tunneling microscopy study on initial stage of atomic hydrogen adsorption on the Si(1 1 1) 7 × 7 surface
Author/Authors :
Fukuda ، نويسنده , , T. and Nakatani، نويسنده , , J. and Nakayama، نويسنده , , H.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
6
From page :
2443
To page :
2448
Abstract :
Initial hydrogen adsorption on the Si(1 1 1) 7 × 7 surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Room temperature adsorbed hydrogen on the adatom in the 7 × 7 reconstruction led to depression of adatoms in the STM images. The hydrogen uptake curve at the adatom site as a function of hydrogen exposure time was well represented by Langmuir adsorption. No preferential adsorption was seen among four inequivalent adatoms in the 7 × 7 reconstruction. Adsorption of the adjacent center and corner adatoms respectively showed ∼10% higher adsorption. Even though the number of reacted adatoms in the half unit of the 7 × 7 reconstruction was statistically random, the number of reacted adatoms in the nearest neighbor half unit was enhanced as the number of reacted sites increased in the half unit.
Keywords :
Chemisorption , Single crystal surfaces , Silicon , hydrogen atom , Scanning tunneling microscopy
Journal title :
Surface Science
Serial Year :
2006
Journal title :
Surface Science
Record number :
1698549
Link To Document :
بازگشت