Title of article :
In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates
Author/Authors :
Yoshikawa، نويسنده , , Genki and Miyadera، نويسنده , , Tetsuhiko and Onoki، نويسنده , , Ryo and Ueno، نويسنده , , Keiji and Nakai، نويسنده , , Ikuyo and Entani، نويسنده , , Shiro and Ikeda، نويسنده , , Susumu and Guo، نويسنده , , Dong and Kiguchi، نويسنده , , Manabu and Kondoh، نويسنده , , Hiroshi and Ohta، نويسنده , , Toshiaki and Saiki، نويسنده , , Koichiro، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
5
From page :
2518
To page :
2522
Abstract :
Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.
Keywords :
surface structure , morphology , Near edge extended X-ray absorption fine structure (NEXAFS) , roughness and topography , Thin film structures , Silicon oxides , pentacene , In-situ characterization , Aromatics , atomic force microscopy
Journal title :
Surface Science
Serial Year :
2006
Journal title :
Surface Science
Record number :
1698579
Link To Document :
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