Author/Authors :
Katsaros، نويسنده , , G. and Rastelli، نويسنده , , A. and Stoffel، نويسنده , , M. and Isella، نويسنده , , G. and Kنnel، نويسنده , , H. von and Bittner، نويسنده , , A.M. and Tersoff، نويسنده , , J. and Denker، نويسنده , , U. and Schmidt، نويسنده , , O.G. and Costantini، نويسنده , , G. and Kern، نويسنده , , K.، نويسنده ,
Abstract :
SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1−x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing.
Keywords :
epitaxy , Etching , atomic force microscopy , surface structure , morphology , roughness and topography , Germanium , Silicon
