Author/Authors :
Ivanchenko، نويسنده , , M.V. and Borisenko، نويسنده , , E.A. and Kotlyar، نويسنده , , V.G. and Utas، نويسنده , , O.A. and Zotov، نويسنده , , A.V. and Saranin، نويسنده , , A.A. and Ustinov، نويسنده , , V.V. and Solin، نويسنده , , N.I. and Romashev، نويسنده , , L.N. and Lifshits، نويسنده , , V.G.، نويسنده ,
Abstract :
Using scanning tunneling microscopy, solid phase epitaxial growth of FeSi2 nanodots on Si ( 1 1 1 ) 3 × 3 -R30°-B surface has been studied in the temperature range of 400–700 °C and Fe coverage of up to 0.5 monolayer. It has been found that density of nanodots formed on Si ( 1 1 1 ) 3 × 3 -R30°-B surface is essentially higher than that on Si(1 1 1)7 × 7 surface at the same temperature and coverage. Density of the 2 × 2 islands and structural defects is reduced on Si ( 1 1 1 ) 3 × 3 -R30°-B surface in comparison with that on Si(1 1 1)7 × 7 surface.
Keywords :
Atom–solid interactions , Silicon , surface structure , Roughness , morphology , Scanning tunneling microscopy (STM) , and topography , Iron
