Title of article
Silicide formation in Co/Si system investigated by depth-resolved positron annihilation and X-ray diffraction
Author/Authors
Abhaya، نويسنده , , S. and Venugopal Rao، نويسنده , , G. and Kalavathi، نويسنده , , S. and Sastry، نويسنده , , V.S. and Amarendra، نويسنده , , G.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
4
From page
2762
To page
2765
Abstract
The transformation of Co/Si to CoSi2/Si in the temperature range of 300–1170 K has been investigated using depth-resolved positron annihilation and Glancing incidence X-ray diffraction (GIXRD). The different silicide phases formed are identified from the experimental positron annihilation characteristics, which are consistent with the GIXRD results. The present study clearly indicates the absence of vacancy defects in the silicide overlayer.
Keywords
Cobalt silicides , X-ray diffraction , Positron spectroscopy
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1698672
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