Title of article
Discrimination of individual atoms on Ge/Si(1 1 1)-(7 × 7) intermixed surface
Author/Authors
Yi، نويسنده , , Insook and Nishi، نويسنده , , Ryuji and Sugimoto، نويسنده , , Yoshiaki and Abe، نويسنده , , Masayuki and Sugawara، نويسنده , , Yasuhiro and Morita، نويسنده , , Seizo، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
5
From page
2766
To page
2770
Abstract
We have discriminated individual Ge atoms from the intermixed Ge/Si(1 1 1)-(7 × 7) surface using a non-contact atomic force microscope at a room temperature environment. In fact, Si–Ge (IV–IV) binary system is considered as one of the most difficult systems for atomic discrimination among atoms in the IV group because of the similarities in the electronic and chemical properties. However, in this study, we found one of the most attractive tools to discriminate a specific atom from the others even in the difficult Si–Ge system. Ge atoms are shown as dim spots in comparison to Si atoms with bright spots on the intermixed surface by a weak chemical bonding energy and/or a relaxation effect despite large atomic radius and high spatial position in both variable frequency shift and topographic images. The discrimination of individual atoms with respect to the chemical interaction variation will further provide a chance to manipulate different atomic species and assemble various nanostructures in near future.
Keywords
Si (silicon) , Ge (germanium) , Nanotechnology , Discrimination , Intermixed surface , Room temperature , Relaxation , Non-contact atomic force microscope (NC–AFM) , Chemical bonding force
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1698674
Link To Document