Title of article
Strain state in bcc Fe films grown on Si(1 1 1)
Author/Authors
Stephan، نويسنده , , R. and Zabrocki، نويسنده , , S. and Wetzel، نويسنده , , P. and Berling، نويسنده , , D. and Mehdaoui، نويسنده , , A. and Bubendorff، نويسنده , , J-L. and Garreau، نويسنده , , G. and Pirri، نويسنده , , C. and Gewinner، نويسنده , , G. and Boudet، نويسنده , , N. and Berar، نويسنده , , J.F.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
5
From page
3003
To page
3007
Abstract
The strain state of Fe films grown on Si(1 1 1) has been investigated by X-ray diffraction (XRD) in the thickness range between 11 and 304 monolayers. Fe grows tetragonally distorted with the orientation relationship Fe(1 1 1) 〈 1 2 ¯ 1 〉 // Si(1 1 1) 〈 1 ¯ 2 1 ¯ 〉 . At low coverage, the films grow pseudomorphic. Above 15 monolayers the films are characterized by the coexistence of a pseudomorphic phase with another one which relaxes with the Fe thickness. This relaxation proceeds rapidly in the earlier stages then slowly with the film thickness. The XRD characterization allows one to obtain quantitative information on the in-plane and out-of-plane strains.
Keywords
epitaxy , Iron , Silicon , Metal–semiconductor magnetic heterostructures , X-ray diffraction
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1698739
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