Title of article :
Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2)
Author/Authors :
Gustafsson، نويسنده , , J.B. and Moons، نويسنده , , E. and Widstrand، نويسنده , , S.M and Johansson، نويسنده , , L.S.O.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Abstract :
The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski–Krastanov film growth was observed with flat lying molecules relative to the substrate.
Keywords :
Photoelectron spectroscopy , Chemisorption , growth , silicon carbide , atomic force microscopy
Journal title :
Surface Science
Journal title :
Surface Science