Modulation structure in the STM images of the non-metallic misfit-layer compound (PbS)1.12VS2

This paper presents the scanning tunneling microscopy (STM) results of the misfit-layer compound (PbS)1.12VS2, which is constructed of alternately stacking of PbS (Q) and VS2 (H) layers. Temperature dependent resistivity measurements show a semiconducting behavior with small activation energies. Unlike the metallic 1Q/1H type of compounds we have succeeded to take both the STM images of a Q layer and a H layer, because electron tunneling from the underlying H layer is suppressed when intermediate positive bias voltage (Vb) is applied to a tip. At Vb = 0.15 V the image shows pseudo-tetragonal arrays of bright spots, although it is obscure with decreasing bias voltage and disappears at less than 10 mV. A modulation structure is found on the H layer of a stepped surface on which surface atoms are undulated in a period being twice the V–V interatomic distance in the [1 0]H or the [1 1]H direction.