• Title of article

    Morphology and defect structure of the CeO2(1 1 1) films grown on Ru(0 0 0 1) as studied by scanning tunneling microscopy

  • Author/Authors

    Lu، نويسنده , , J.-L. and Gao، نويسنده , , H.-J. and Shaikhutdinov، نويسنده , , S. and Freund، نويسنده , , H.-J.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2006
  • Pages
    7
  • From page
    5004
  • To page
    5010
  • Abstract
    The morphology of ceria films grown on a Ru(0 0 0 1) substrate was studied by scanning tunneling microscopy in combination with low-energy electron diffraction and Auger electron spectroscopy. The preparation conditions were determined for the growth of nm-thick, well-ordered CeO2(1 1 1) films covering the entire surface. The recipe has been adopted from the one suggested by Mullins et al. [D.R. Mullins, P.V. Radulovic, S.H. Overbury, Surf. Sci. 429 (1999) 186] and modified in that significantly higher oxidation temperatures are required to form atomically flat terraces, up to 500 إ in width, with a low density of the point defects assigned to oxygen vacancies. The terraces often consist of several rotational domains. A circular shape of terraces suggest a large variety of undercoordinated sites at the step edges which preferentially nucleate gold particles deposited onto these films. The results show that reactivity studies over ceria and metal/ceria surfaces should be complemented with STM studies, which provide direct information on the film morphology and surface defects, which are usually considered as active sites for catalysis over ceria.
  • Keywords
    ceria , Defects , Scanning tunneling microscopy , Thin films
  • Journal title
    Surface Science
  • Serial Year
    2006
  • Journal title
    Surface Science
  • Record number

    1699889