Title of article
Morphology and defect structure of the CeO2(1 1 1) films grown on Ru(0 0 0 1) as studied by scanning tunneling microscopy
Author/Authors
Lu، نويسنده , , J.-L. and Gao، نويسنده , , H.-J. and Shaikhutdinov، نويسنده , , S. and Freund، نويسنده , , H.-J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
7
From page
5004
To page
5010
Abstract
The morphology of ceria films grown on a Ru(0 0 0 1) substrate was studied by scanning tunneling microscopy in combination with low-energy electron diffraction and Auger electron spectroscopy. The preparation conditions were determined for the growth of nm-thick, well-ordered CeO2(1 1 1) films covering the entire surface. The recipe has been adopted from the one suggested by Mullins et al. [D.R. Mullins, P.V. Radulovic, S.H. Overbury, Surf. Sci. 429 (1999) 186] and modified in that significantly higher oxidation temperatures are required to form atomically flat terraces, up to 500 إ in width, with a low density of the point defects assigned to oxygen vacancies. The terraces often consist of several rotational domains. A circular shape of terraces suggest a large variety of undercoordinated sites at the step edges which preferentially nucleate gold particles deposited onto these films. The results show that reactivity studies over ceria and metal/ceria surfaces should be complemented with STM studies, which provide direct information on the film morphology and surface defects, which are usually considered as active sites for catalysis over ceria.
Keywords
ceria , Defects , Scanning tunneling microscopy , Thin films
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1699889
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