Title of article :
Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1):carbon structure
Author/Authors :
Kim، نويسنده , , J.W. and Kampen، نويسنده , , T.U. and Horn، نويسنده , , K. and Jung، نويسنده , , M.-C.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Abstract :
Adsorption and thermal decomposition of ethylene on Si(1 1 1) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal annealing is analyzed, from which the unique chemical and structural properties of 3 × 3 reconstructed phase can be derived. We also discuss the coverage of the C atoms involved and their position on the 3 × 3 surface in terms of a structure model.
Keywords :
carbon , Surface chemical reaction , Synchrotron radiation photoelectron spectroscopy , Silicon , ethylene
Journal title :
Surface Science
Journal title :
Surface Science