Author/Authors :
Tona، نويسنده , , Masahide and Watanabe، نويسنده , , Hirofumi and Takahashi، نويسنده , , Satoshi N. Nakamura، نويسنده , , Nobuyuki and Yoshiyasu، نويسنده , , Nobuo and Sakurai، نويسنده , , Makoto and Terui، نويسنده , , Toshifumi and Mashiko، نويسنده , , Shinro and Yamada، نويسنده , , Chikashi and Ohtani، نويسنده , , Shunsuke، نويسنده ,
Abstract :
Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Sin+) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.
Keywords :
Highly charged ion (HCI) , Si(1 , 1)-(7 , 7) surface , Scanning tunneling microscope (STM) , 1 , Time of flight secondary ion mass spectrometry (TOF/SIMS) , ×
