Author/Authors :
Klusek، نويسنده , , Z. and Busiakiewicz، نويسنده , , A. and Datta، نويسنده , , P.K. and Schmidt، نويسنده , , R. and Kozlowski، نويسنده , , W. and Kowalczyk، نويسنده , , P. and Dabrowski، نويسنده , , P. and Olejniczak، نويسنده , , W.، نويسنده ,
Abstract :
High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO2(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO2−x towards Ti2O3.
Keywords :
Scanning tunnelling spectroscopy , Surface states , Scanning tunnelling microscopy , Titanium oxide