• Title of article

    Atomic structure of the Si(5 5 12)-2 × 1 surface

  • Author/Authors

    Kim، نويسنده , , Hidong and Li، نويسنده , , Huiting and Zhu، نويسنده , , Yong-Zhe and Hahn، نويسنده , , J.R. and Seo، نويسنده , , Jae M. Seo، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    1831
  • To page
    1835
  • Abstract
    Based on the results of scanning tunneling microscopy studies of the reconstructed Si(5 5 12)-2 × 1 surface, its atomic structure has been found. It turns out that Si(5 5 12)-2 × 1 consists of four one-dimensional structures: honeycomb (H) chain, π-bonded H′ (π) chain, dimer-adatom (D/A) row, and tetramer (T) row. Its period is composed of three subunits, i.e., (i) (3 3 7) unit with a D/A row [D(3 3 7)], (ii) (3 3 7) unit with a T row [T(3 3 7)], and (iii) (2 2 5) unit with both a D/A and a T row. Two kinds of adjacent subunits, T(3 3 7)/D(3 3 7) and D(3 3 7)/(2 2 5), are divided by H chains with 2× periodicity due to buckling, while one kind of adjacent subunits, T(3 3 7)/(2 2 5), is divided by a π chain with 1× periodicity. Two chain structures, H and π chains, commute with each other depending upon the external stresses perpendicular to the chain, which is the same for two row structures, D/A and T rows. It can be concluded that the wide and planar reconstruction of Si(5 5 12)-2 × 1 is originates from the stress balance among two commutable chains and two commutable rows.
  • Keywords
    Scanning tunneling microscopy , Silicon , morphology , Roughness , topography , surface structure , High index single crystal surfaces
  • Journal title
    Surface Science
  • Serial Year
    2007
  • Journal title
    Surface Science
  • Record number

    1700627