Author/Authors :
De Padova، نويسنده , , P. and Ayoub، نويسنده , , J.-P. and Berbezier، نويسنده , , I. and Mariot، نويسنده , , J.-M. and Taleb-Ibrahimi، نويسنده , , A. and Richter، نويسنده , , M.C. and Heckmann، نويسنده , , O. and Testa، نويسنده , , A.M. and Fiorani، نويسنده , , D. and Olivieri، نويسنده , , B. and Picozzi، نويسنده , , S. and Hricovini، نويسنده , , K.، نويسنده ,
Abstract :
Mn0.06Ge0.94 samples have been grown by molecular-beam epitaxy on Ge(0 0 1)2 × 1. High-resolution transmission electron microscopy shows the coexistence of an ordered diluted Mn0.06Ge0.94 film and of nanoscopic crystallites, which were identified as Mn5Ge3 by electron diffraction. The magnetic properties of the Mn0.06Ge0.94 samples show a superposition of a paramagnetic behavior, due to the interaction of Mn atoms diluted in the Ge host, and a ferromagnetic behavior attributed to the Mn5Ge3 crystallites dispersed into the films. The Mn L2,3 X-ray absorption spectra of the Mn0.06Ge0.94 films exhibit a lineshape typical of metallic Mn, with considerably reduced multiplet structure.
Keywords :
Magnetic measurements , Metal–semiconductor interfaces , Manganese , Germanium , Electron microscopy , Electron–solid diffraction , X-ray absorption spectroscopy , Soft X-ray photoelectron spectroscopy
