Author/Authors :
Morresi، نويسنده , , L. and Ayoub، نويسنده , , J.P. and Pinto، نويسنده , , N. and Ficcadenti، نويسنده , , Filippo M. and Murri، نويسنده , , R. and Ronda، نويسنده , , A. and Berbezier، نويسنده , , I. and D’Orazio، نويسنده , , F. and Lucari، نويسنده , , F.، نويسنده ,
Abstract :
We report on the structural, magnetic and electronic transport properties of thin MnxGe1−x films grown at 350 °C. Isolated Mn5Ge3 nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a MnxGe1−x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x ≅ 0.03.
Keywords :
Germanium , Manganese , TEM , Semiconducting films , Magnetic films , Electronic transport measurement
