Dynamic barrier height modulation analysis of metal–insulator–semiconductor junctions built on silicon surfaces modified by covalent organic layers

Aim of this paper is to validate a modified Schottky barrier model accounting for the electrical properties of metal – self-assembled layer – semiconductor structures. To this end, the effect of the dynamic modulation of the dipole moment of the organic layer was studied. The system was a junction built on Si(1 0 0) surfaces modified by grafting an organic layer by wet chemistry reactions. As the metallic electrode, a thin, porous gold layer was deposited, enabling gas diffusion through it. In such a geometry, a polar gas was allowed to adsorb onto the Si surface, and the variation of the barrier height could be measured and correlated with the dipole moment of the gas molecule and its partial pressure.