Author/Authors :
Brambilla، نويسنده , , A. and Sessi، نويسنده , , P. and Duٍ، نويسنده , , L. and Finazzi، نويسنده , , M. and Cabanillas-Gonzalez، نويسنده , , J. and Egelhaaf، نويسنده , , H.-J. and Lanzani، نويسنده , , G. and Ciccacci، نويسنده , , F.، نويسنده ,
Abstract :
We present a detailed investigation of the electronic properties of C60 grown on GaAs(1 0 0) substrates, as a function of the fullerene coverage, from the very early stages of interface formation up to the development of a bulk-like fullerene film. We monitor the chemical interactions and the energy levels alignment by means of X-rays, ultraviolet and inverse photoemission spectroscopies. The two latter techniques allow to investigate the electronic structure close to the Fermi level. Energy levels alignment at the interfaces of C60 with p-doped and GaAs(1 0 0) are obtained and discussed.
