Title of article
Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy
Author/Authors
Bussetti، نويسنده , , G. and Goletti، نويسنده , , C. and Chiaradia، نويسنده , , P. and Sassella، نويسنده , , A. and Campione، نويسنده , , M. and Tavazzi، نويسنده , , S. and Borghesi، نويسنده , , A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2007
Pages
4
From page
4488
To page
4491
Abstract
The growth process of thin films and multilayers of quaterthiophene and sexithiophene onto molecular single crystals has been monitored in situ and in real time during deposition by organic molecular beam epitaxy, measuring the anisotropy of the optical reflectivity. The evolution of the spectra with thickness provides the signature of an epitaxial growth of the films.
Keywords
Organic heterojunction , In situ characterization , Thin film structure , Reflectance anisotropy spectroscopy , organic thin films , Molecular Beam Epitaxy
Journal title
Surface Science
Serial Year
2007
Journal title
Surface Science
Record number
1701945
Link To Document