Title of article :
Growth of thin alumina films on a vicinal NiAl surface
Author/Authors :
Ulrich، نويسنده , , Stefan and Nilius، نويسنده , , Niklas and Freund، نويسنده , , Hans-Joachim، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Pages :
5
From page :
4603
To page :
4607
Abstract :
Dramatic changes in the surface morphology have been observed during the oxidation of stepped NiAl(16, 14, 1) by LEED and STM. The initial sequence of identical (1 1 0) terraces is lifted in favor of large, triangular planes, whose mean size is determined by the mismatch-induced stress that accumulates in the thin alumina film. The asymmetry of the original step direction on NiAl(16, 14, 1) with respect to the orientation of the two alumina reflection domains favors the formation of one domain type, for which the stress relief via NiAl step edges is particularly efficient.
Keywords :
Scanning tunneling microscopy , Aluminum oxide , Surface stress , Metal–insulator interface , Oxidation
Journal title :
Surface Science
Serial Year :
2007
Journal title :
Surface Science
Record number :
1702003
Link To Document :
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