• Title of article

    Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscattering

  • Author/Authors

    Vos، نويسنده , , M. and Went، نويسنده , , M.R.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2007
  • Pages
    11
  • From page
    4862
  • To page
    4872
  • Abstract
    We demonstrate that high-energy, high-resolution reflection electron energy loss spectroscopy can provide unique insights into interface formation, especially for the case where an extended interface is formed. By changing the geometry and/or electron energy the electronic structure can be probed over a range of thicknesses (from 10s of Å to more than 1000 Å). At the same time one resolves the elastically scattered electrons into different components, corresponding to scattering of atoms with different mass (so-called ‘electron Rutherford backscattering’). Thus these high-energy REELS/elastic scattering experiments obtain information on both the electronic structure and the atomic composition of the overlayer formed.
  • Keywords
    Thin films , Reflection electron energy loss spectroscopy , Elastic electron scattering , Plasmon excitation
  • Journal title
    Surface Science
  • Serial Year
    2007
  • Journal title
    Surface Science
  • Record number

    1702128