Title of article :
Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscattering
Author/Authors :
Vos، نويسنده , , M. and Went، نويسنده , , M.R.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Pages :
11
From page :
4862
To page :
4872
Abstract :
We demonstrate that high-energy, high-resolution reflection electron energy loss spectroscopy can provide unique insights into interface formation, especially for the case where an extended interface is formed. By changing the geometry and/or electron energy the electronic structure can be probed over a range of thicknesses (from 10s of Å to more than 1000 Å). At the same time one resolves the elastically scattered electrons into different components, corresponding to scattering of atoms with different mass (so-called ‘electron Rutherford backscattering’). Thus these high-energy REELS/elastic scattering experiments obtain information on both the electronic structure and the atomic composition of the overlayer formed.
Keywords :
Thin films , Reflection electron energy loss spectroscopy , Elastic electron scattering , Plasmon excitation
Journal title :
Surface Science
Serial Year :
2007
Journal title :
Surface Science
Record number :
1702128
Link To Document :
بازگشت