• Title of article

    Initial stages of ZrO2 chemical vapor deposition on Si(1 0 0)-(2 × 1) from zirconium tetra-tert-butoxide

  • Author/Authors

    Karlsson، نويسنده , , P.G. and Gِthelid، نويسنده , , E. and Richter، نويسنده , , J.H. and Sandell، نويسنده , , A.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2008
  • Pages
    7
  • From page
    1803
  • To page
    1809
  • Abstract
    The initial stages of chemical vapor deposition of ZrO2 from zirconium tetra-tert-butoxide (ZTB) on Si(1 0 0)-(2 × 1) have been studied by scanning tunnelling microscopy (STM) and synchrotron radiation excited photoelectron spectroscopy (PES). The STM images and core level (PES) spectra indicate that the predominant surface modifications induced by ZTB are due to silicon carbonization and formation of zirconium dioxide. The carbonization reaction leads to formation of subsurface carbon and two types of reconstructions are discussed: dimer vacancies and dimer vacancies in conjunction with a rotated surface Si-dimer. Indications for the formation of small amounts of zirconium silicide are also found. No evidence for silicon oxidation can be observed with PES, in contrast to the interface properties previously found after larger exposures to ZTB.
  • Keywords
    high k dielectrics , zirconium dioxide , Silicon , Semiconductor–insulator interfaces , Synchrotron radiation photoelectron spectroscopy , Scanning tunnelling microscopy , chemical vapor deposition
  • Journal title
    Surface Science
  • Serial Year
    2008
  • Journal title
    Surface Science
  • Record number

    1703233