Title of article :
Initial stages of ZrO2 chemical vapor deposition on Si(1 0 0)-(2 × 1) from zirconium tetra-tert-butoxide
Author/Authors :
Karlsson، نويسنده , , P.G. and Gِthelid، نويسنده , , E. and Richter، نويسنده , , J.H. and Sandell، نويسنده , , A.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2008
Abstract :
The initial stages of chemical vapor deposition of ZrO2 from zirconium tetra-tert-butoxide (ZTB) on Si(1 0 0)-(2 × 1) have been studied by scanning tunnelling microscopy (STM) and synchrotron radiation excited photoelectron spectroscopy (PES). The STM images and core level (PES) spectra indicate that the predominant surface modifications induced by ZTB are due to silicon carbonization and formation of zirconium dioxide. The carbonization reaction leads to formation of subsurface carbon and two types of reconstructions are discussed: dimer vacancies and dimer vacancies in conjunction with a rotated surface Si-dimer. Indications for the formation of small amounts of zirconium silicide are also found. No evidence for silicon oxidation can be observed with PES, in contrast to the interface properties previously found after larger exposures to ZTB.
Keywords :
high k dielectrics , zirconium dioxide , Silicon , Semiconductor–insulator interfaces , Synchrotron radiation photoelectron spectroscopy , Scanning tunnelling microscopy , chemical vapor deposition
Journal title :
Surface Science
Journal title :
Surface Science