Title of article :
Coalescence of domes and superdomes at a low growth rate or during annealing: Towards the formation of flat-top superdomes
Author/Authors :
Richard ، نويسنده , , M.-I. and Chen، نويسنده , , G. and Schülli، نويسنده , , T.U. and Renaud، نويسنده , , G. and Bauer، نويسنده , , G.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2008
Pages :
5
From page :
2157
To page :
2161
Abstract :
We investigate the morphology of islands obtained by epitaxial growth of Ge on Si(0 0 1). During a low growth rate or during annealing and depending of the quench method, we observe the formation of a new type of superdomes, which exhibit additional {15 3 23} facets, an increase of their {0 0 1} and {1 0 5} facet area on their top and a smaller aspect ratio compared to known superdomes. This flat-top superdome shape results from the complex evolution of domes and superdomes: coalescence, intermixing and ripening. Dome or superdome coalescence which results in the newly observed shape appears as a dominant pathway towards dislocation nucleation for the investigated temperature range.
Keywords :
atomic force microscopy , Silicon , Germanium islands , Coalescence , Growth , Faceting , Annealing , Molecular-beam epitaxy
Journal title :
Surface Science
Serial Year :
2008
Journal title :
Surface Science
Record number :
1703376
Link To Document :
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