• Title of article

    Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

  • Author/Authors

    Jeon، نويسنده , , Jeong Heum and Chung، نويسنده , , Kyung Hoon and Kim، نويسنده , , Howon and Kahng، نويسنده , , Se-Jong، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2009
  • Pages
    6
  • From page
    145
  • To page
    150
  • Abstract
    The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 إ. A possible atomic model is proposed based on our observation.
  • Keywords
    Scanning tunneling microscopy , growth , surface structure
  • Journal title
    Surface Science
  • Serial Year
    2009
  • Journal title
    Surface Science
  • Record number

    1704145