Initial adsorption of O2 on Si(1 0 0): Non-adiabaticity originating both from a discrete and a continuous set of electronic excitations

The initial adsorption of O2 on Si(1 0 0) is investigated by density-functional theory calculations. The potential energy surface shows strong corrugations which can be interpreted as precursor states, however, there are also large areas where adsorption proceeds without a barrier. Furthermore, the initial sticking probability as a function of translational energy using first-principles molecular dynamics is calculated. The result is in disagreement with measurements of sticking probability which vary from high-low-high values as the translational energy of the oxygen molecules increase. A simple non-adiabatic model is put-forth that explains not only the measured sticking probability, but also have a novel interpretation of the increased sticking probability owing to tensile stress. The model deals with non-adiabatic effects originating both from a discrete and continuous set of electronic excitations. The implications are general and can be applied to other systems.