Title of article :
Growth mode and novel structure of ultra-thin KCl layers on the Si(1 0 0)-2 × 1 surface
Author/Authors :
Tsay، نويسنده , , S.-F. and Chung، نويسنده , , J.Y. and Hsieh، نويسنده , , M.-F. and Ferng، نويسنده , , S.-S. and Lou، نويسنده , , C.-T. and Lin، نويسنده , , D.-S.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2009
Abstract :
This study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 × 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 × 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results.
Keywords :
Alkali Halides , Silicon vgermanium , Synchrotron radiation photoelectron spectroscopy , Surface relaxation and reconstruction , epitaxy , Thin film structures , Semiconductor – insulator interfaces , Scanning tunneling microscopy
Journal title :
Surface Science
Journal title :
Surface Science